Effective surface passivation of p-type crystalline silicon with silicon oxides formed by light-induced anodisation
نویسندگان
چکیده
منابع مشابه
Change of diffused and scattered light with surface roughness of p-type porous Silicon
Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...
متن کاملChange of diffused and scattered light with surface roughness of p-type porous Silicon
Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...
متن کاملSurface passivation of crystalline silicon by Cat-CVD amorphous and nanocrystalline thin silicon films C.Voz
In this work we study the electronic surface passivation of crystalline silicon with intrinsic thin silicon films deposited by Catalytic CVD. The contactless method used to determine the effective surface recombination velocity was the Quasi-Steady-State Photoconductance technique. Hydrogenated amorphous and nanocrystalline silicon films were evaluated as passivating layers on nand p-type float...
متن کاملchange of diffused and scattered light with surface roughness of p-type porous silicon
porous silicon samples were prepared by electrochemical etching method for different etching times. the structural properties of porous silicon (ps) samples were determined from the atomic force microscopy (afm) measurements. the surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. u...
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The reduction of parasitic recombination processes commonly occurring within the silicon crystal and at its surfaces is of primary importance in crystalline silicon devices, particularly in photovoltaics. Here we explore a simple, room temperature treatment, involving a nonaqueous solution of the superacid bis(trifluoromethane)sulfonimide, to temporarily deactivate recombination centers at the ...
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2014
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2014.08.028